Bandgap Engineering Silicon Nanopillars

Author: Latawiec, Pawel Michal

Year: 2013

Degree: Senior thesis (Major)

Advisor: Scherer, Axel

Committee Member: None, None

Option: Physics

DOI: 10.7907/CNP5-BZ88

Abstract

Vertically oriented , bandgap engineered silicon nanopillars were fabricated and addressed. Devices were fabricated via a three dimensional etching process which created sub-5 nm constrictions in silicon radius upon oxidation. This effect was used to create a Coulomb blockade device. Devices were tested at room and liquid nitrogen temperatures. They showed a clear blockade effect distinctive of an asymmetric double tunnel junction at low temperatures which disappeared when tested at higher temperatures. Different device fabrication parameters were also tested to develop high-current devices, including chip anneal time. Furthermore, both device fabrication steps and current flow were modeled and simulated.

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