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G.}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.99.235433}, number = {23}, year = {2019}, month = {jun 28}, note = {publisher: American Physical Society}, pages = {235433}, title = {Nonlinear optical selection rules of excitons in monolayer transition metal dichalcogenides}, volume = {99}, } @article{novoselovElectricFieldEffect2004a, author = {Novoselov, K. S. and Geim, A. K. and Morozov, S. V. and Jiang, D. and Zhang, Y. and Dubonos, S. V. and Grigorieva, I. V. and Firsov, A. A.}, journal = {Science}, doi = {10.1126/science.1102896}, number = {5696}, year = {2004}, month = {oct 22}, note = {publisher: American Association for the Advancement of Science TLDR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.}, pages = {666--669}, title = {Electric {Field} {Effect} in {Atomically} {Thin} {Carbon} {Films}}, volume = {306}, } @article{gusyninUnconventionalIntegerQuantum2005, author = {Gusynin, V. P. and Sharapov, S. G.}, journal = {Physical Review Letters}, doi = {10.1103/PhysRevLett.95.146801}, issn = {0031-9007, 1079-7114}, number = {14}, year = {2005}, month = {sep 28}, pages = {146801}, title = {Unconventional {Integer} {Quantum} {Hall} {Effect} in {Graphene}}, volume = {95}, } @article{jiangQuantumHallEffect2007b, author = {Jiang, Z. and Zhang, Y. and Tan, Y. -W. and Stormer, H. L. and Kim, P.}, series = {Exploring graphene}, journal = {Solid State Communications}, doi = {10.1016/j.ssc.2007.02.046}, issn = {0038-1098}, number = {1}, year = {2007}, month = {jul 1}, pages = {14--19}, title = {Quantum {Hall} effect in graphene}, volume = {143}, } @article{bolotinObservationFractionalQuantum2009a, author = {Bolotin, Kirill I. and Ghahari, Fereshte and Shulman, Michael D. and Stormer, Horst L. and Kim, Philip}, journal = {Nature}, doi = {10.1038/nature08582}, issn = {0028-0836, 1476-4687}, number = {7270}, year = {2009}, month = {nov 12}, note = {TLDR: The observation of the fractional quantum Hall effect in ultraclean, suspended graphene is reported and it is shown that at low carrier density graphene becomes an insulator with a magnetic-field-tunable energy gap.}, pages = {196--199}, title = {Observation of the fractional quantum {Hall} effect in graphene}, volume = {462}, } @article{yamamotoValleyHallEffect2015, author = {Yamamoto, Michihisa and Shimazaki, Yuya and Borzenets, Ivan V. and Tarucha, Seigo}, journal = {Journal of the Physical Society of Japan}, doi = {10.7566/JPSJ.84.121006}, issn = {0031-9015, 1347-4073}, number = {12}, year = {2015}, month = {dec 15}, pages = {121006}, title = {Valley {Hall} {Effect} in {Two}-{Dimensional} {Hexagonal} {Lattices}}, volume = {84}, } @article{castronetoElectronicPropertiesGraphene2009b, author = {Castro Neto, A. H.}, journal = {Reviews of Modern Physics}, doi = {10.1103/RevModPhys.81.109}, number = {1}, year = {2009}, pages = {109--162}, title = {The electronic properties of graphene}, volume = {81}, } @article{wallaceBandTheoryGraphite1947a, author = {Wallace, P. R.}, journal = {Physical Review}, doi = {10.1103/PhysRev.71.622}, issn = {0031-899X}, number = {9}, year = {1947}, month = {may 1}, pages = {622--634}, title = {The {Band} {Theory} of {Graphite}}, volume = {71}, } @article{reichTightbindingDescriptionGraphene2002, author = {Reich, S. and Maultzsch, J. and Thomsen, C. and Ordej{\' o}n, P.}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.66.035412}, issn = {0163-1829, 1095-3795}, number = {3}, year = {2002}, month = {jul 19}, pages = {035412}, title = {Tight-binding description of graphene}, volume = {66}, } @book{Saito1998Physical, author = {Saito, R and Dresselhaus, G and Dresselhaus, M S}, year = {1998}, note = {Citation Key: doi:10.1142/p080 DOI: 10.1142/p080 tex.eprint: https://www.worldscientific.com/doi/pdf/10.1142/p080}, publisher = {{PUBLISHED BY IMPERIAL COLLEGE PRESS and DISTRIBUTED BY WORLD SCIENTIFIC PUBLISHING CO.}}, title = {Physical properties of carbon nanotubes}, url = {https://www.worldscientific.com/doi/abs/10.1142/p080}, } @article{laturiaDielectricPropertiesHexagonal2018, author = {Laturia, Akash and Van De Put, Maarten L. and Vandenberghe, William G.}, journal = {npj 2D Materials and Applications}, doi = {10.1038/s41699-018-0050-x}, issn = {2397-7132}, number = {1}, year = {2018}, month = {mar 8}, pages = {6}, title = {Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk}, volume = {2}, } @article{xiaMeasurementQuantumCapacitance2009, author = {Xia, Jilin and Chen, Fang and Li, Jinghong and Tao, Nongjian}, journal = {Nature Nanotechnology}, doi = {10.1038/nnano.2009.177}, issn = {1748-3387, 1748-3395}, number = {8}, year = {2009}, month = {8}, note = {TLDR: The results strongly indicate that the long-standing puzzle about the interfacial capacitance in carbon-based electrodes has a quantum origin, and suggest that charged impurities also influences the quantum capacitance.}, pages = {505--509}, title = {Measurement of the quantum capacitance of graphene}, volume = {4}, } @article{droscherQuantumCapacitanceDensity2010, author = {Dr{\" o}scher, S. and Roulleau, P. and Molitor, F. and Studerus, P. and Stampfer, C. and Ensslin, K. and Ihn, T.}, journal = {Applied Physics Letters}, doi = {10.1063/1.3391670}, issn = {0003-6951, 1077-3118}, number = {15}, year = {2010}, month = {apr 12}, pages = {152104}, title = {Quantum capacitance and density of states of graphene}, volume = {96}, } @article{goslingUniversalMobilityCharacteristics2021a, author = {Gosling, Jonathan H. and Makarovsky, Oleg and Wang, Feiran and Cottam, Nathan D. and Greenaway, Mark T. and Patan{\` e}, Amalia and Wildman, Ricky D. and Tuck, Christopher J. and Turyanska, Lyudmila and Fromhold, T. Mark}, journal = {Communications Physics}, doi = {10.1038/s42005-021-00518-2}, issn = {2399-3650}, number = {1}, year = {2021}, month = {feb 18}, pages = {30}, title = {Universal mobility characteristics of graphene originating from charge scattering by ionised impurities}, volume = {4}, } @article{zhengHallConductivityTwodimensional2002, author = {Zheng, Yisong and Ando, Tsuneya}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.65.245420}, issn = {0163-1829, 1095-3795}, number = {24}, year = {2002}, month = {jun 18}, pages = {245420}, title = {Hall conductivity of a two-dimensional graphite system}, volume = {65}, } @article{manzeli2DTransitionMetal2017, author = {Manzeli, Sajedeh and Ovchinnikov, Dmitry and Pasquier, Diego and Yazyev, Oleg V. and Kis, Andras}, journal = {Nature Reviews Materials}, doi = {10.1038/natrevmats.2017.33}, issn = {2058-8437}, number = {8}, year = {2017}, month = {jun 13}, pages = {17033}, title = {2D transition metal dichalcogenides}, volume = {2}, } @article{hanVanWaalsMetallic2018, author = {Han, Gang Hee and Duong, Dinh Loc and Keum, Dong Hoon and Yun, Seok Joon and Lee, Young Hee}, journal = {Chemical Reviews}, doi = {10.1021/acs.chemrev.7b00618}, issn = {0009-2665, 1520-6890}, number = {13}, year = {2018}, month = {jul 11}, note = {TLDR: The structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pressures, and strains are presented.}, pages = {6297--6336}, title = {van der {Waals} {Metallic} {Transition} {Metal} {Dichalcogenides}}, volume = {118}, } @article{zhaoMetastableMoS2Crystal2018, author = {Zhao, Wei and Pan, Jie and Fang, Yuqiang and Che, Xiangli and Wang, Dong and Bu, Kejun and Huang, Fuqiang}, journal = {Chemistry -- A European Journal}, doi = {10.1002/chem.201801018}, issn = {0947-6539, 1521-3765}, number = {60}, year = {2018}, month = {oct 26}, note = {TLDR: In this Review, the recent research progress on metastable MoS2 is summarized, especially with an emphasis on the diverse synthetic approaches and the newly uncovered physical properties.}, pages = {15942--15954}, title = {Metastable {MoS}\textsubscript{2} : Crystal {Structure}, {Electronic} {Band} {Structure}, {Synthetic} {Approach} and {Intriguing} {Physical} {Properties}}, volume = {24}, } @article{shirodkarEmergenceFerroelectricityMetalSemiconductor2014b, author = {Shirodkar, Sharmila N. and Waghmare, Umesh V.}, journal = {Physical Review Letters}, doi = {10.1103/PhysRevLett.112.157601}, issn = {0031-9007, 1079-7114}, number = {15}, year = {2014}, month = {apr 15}, note = {TLDR: A spontaneous symmetry breaking of the metallic state of the 1T monolayer of MoS2 leads to an unexpected yet robust ferroelectricity with ordering of electric dipoles perpendicular to its plane, giving tunability in design of such devices based on two-dimensional chalcogenides.}, pages = {157601}, title = {Emergence of {Ferroelectricity} at a {Metal}-{Semiconductor} {Transition} in a 1 {T} {Monolayer} of {MoS} 2}, volume = {112}, } @article{luUnravelingPiezoelectricityTwoDimensional2023, author = {Lu, Haidong and Aramberri, Hugo and Lipatov, Alexey and Proksch, Roger and Sinitskii, Alexander and {\' I}{\~ n}iguez, Jorge and Gruverman, Alexei}, journal = {ACS Materials Letters}, doi = {10.1021/acsmaterialslett.3c01051}, issn = {2639-4979, 2639-4979}, number = {11}, year = {2023}, month = {nov 6}, pages = {3136--3141}, title = {Unraveling {Piezoelectricity} of {Two}-{Dimensional} {Ferroelectric} {Metal} 1T-{MoS}\textsubscript{2}}, volume = {5}, } @article{liuPhaseselectiveSynthesis1T2018, author = {Liu, Lina and Wu, Juanxia and Wu, Liyuan and Ye, Meng and Liu, Xiaozhi and Wang, Qian and Hou, Siyao and Lu, Pengfei and Sun, Lifei and Zheng, Jingying and Xing, Lei and Gu, Lin and Jiang, Xiangwei and Xie, Liming and Jiao, Liying}, journal = {Nature Materials}, doi = {10.1038/s41563-018-0187-1}, issn = {1476-1122, 1476-4660}, number = {12}, year = {2018}, month = {12}, note = {TLDR: This phase-controlled bottom-up synthesis of 1T MoS2 monolayers with high phase purity allows us to characterize their intrinsic optical and electrical properties, revealing a characteristic in-plane anisotropy.}, pages = {1108--1114}, title = {Phase-selective synthesis of 1T {MoS2} monolayers and heterophase bilayers}, volume = {17}, } @article{zhangSuperconductivityPotassiumDopedMetallic2016, author = {Zhang, Renyan and Tsai, I-Ling and Chapman, James and Khestanova, Ekaterina and Waters, John and Grigorieva, Irina V.}, journal = {Nano Letters}, doi = {10.1021/acs.nanolett.5b04361}, issn = {1530-6984}, number = {1}, year = {2016}, month = {jan 13}, note = {publisher: American Chemical Society TLDR: It is demonstrated that at doping levels significantly higher than that required to induce superconductivity in 2H-MoS2, both 1T and 1T' phases become superconducting with Tc = 2.8 and 4.6 K, respectively.}, pages = {629--636}, title = {Superconductivity in {Potassium}-{Doped} {Metallic} {Polymorphs} of {MoS2}}, volume = {16}, } @article{zhaoMetastableMoS2Crystal2018a, author = {Zhao, Wei and Pan, Jie and Fang, Yuqiang and Che, Xiangli and Wang, Dong and Bu, Kejun and Huang, Fuqiang}, journal = {Chemistry -- A European Journal}, doi = {10.1002/chem.201801018}, issn = {0947-6539, 1521-3765}, number = {60}, year = {2018}, month = {oct 26}, note = {TLDR: In this Review, the recent research progress on metastable MoS2 is summarized, especially with an emphasis on the diverse synthetic approaches and the newly uncovered physical properties.}, pages = {15942--15954}, title = {Metastable {MoS}\textsubscript{2} : Crystal {Structure}, {Electronic} {Band} {Structure}, {Synthetic} {Approach} and {Intriguing} {Physical} {Properties}}, volume = {24}, } @article{weiElectronicElasticProperties2010, author = {Wei, Li and Jun-fang, Chen and Qinyu, He and Teng, Wang}, journal = {Physica B: Condensed Matter}, doi = {10.1016/j.physb.2010.03.022}, issn = {09214526}, number = {10}, year = {2010}, month = {5}, pages = {2498--2502}, title = {Electronic and elastic properties of {MoS2}}, volume = {405}, } @article{kumarFirstPrincipleComparative2012, author = {Kumar, Ashok and Ahluwalia, P.K.}, journal = {Materials Chemistry and Physics}, doi = {10.1016/j.matchemphys.2012.05.055}, issn = {02540584}, number = {2-3}, year = {2012}, month = {8}, pages = {755--761}, title = {A first principle {Comparative} study of electronic and optical properties of 1H -- {MoS2} and 2H -- {MoS2}}, volume = {135}, } @article{splendianiEmergingPhotoluminescenceMonolayer2010c, author = {Splendiani, Andrea and Sun, Liang and Zhang, Yuanbo and Li, Tianshu and Kim, Jonghwan and Chim, Chi-Yung and Galli, Giulia and Wang, Feng}, journal = {Nano Letters}, doi = {10.1021/nl903868w}, issn = {1530-6984, 1530-6992}, number = {4}, year = {2010}, month = {apr 14}, note = {TLDR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.}, pages = {1271--1275}, title = {Emerging {Photoluminescence} in {Monolayer} {MoS}\textsubscript{2}}, volume = {10}, } @article{liuThreebandTightbindingModel2013, author = {Liu, Gui-Bin and Shan, Wen-Yu and Yao, Yugui and Yao, Wang and Xiao, Di}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.88.085433}, issn = {1098-0121, 1550-235X}, number = {8}, year = {2013}, month = {aug 26}, pages = {085433}, title = {Three-band tight-binding model for monolayers of group-{VIB} transition metal dichalcogenides}, volume = {88}, } @article{wuExcitonBandStructure2015d, author = {Wu, Fengcheng and Qu, Fanyao and MacDonald, A. H.}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.91.075310}, issn = {1098-0121, 1550-235X}, number = {7}, year = {2015}, month = {feb 24}, pages = {075310}, title = {Exciton band structure of monolayer {MoS} 2}, volume = {91}, } @article{shahriariBandStructureOrbital2018, author = {Shahriari, Majid and Ghalambor Dezfuli, Abdolmohammad and Sabaeian, Mohammad}, journal = {Superlattices and Microstructures}, doi = {10.1016/j.spmi.2017.12.030}, issn = {07496036}, year = {2018}, month = {2}, pages = {169--182}, title = {Band structure and orbital character of monolayer {MoS2} with eleven-band tight-binding model}, volume = {114}, } @article{wuExcitonBandStructure2015b, author = {Wu, Fengcheng and Qu, Fanyao and MacDonald, A. H.}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.91.075310}, issn = {1098-0121, 1550-235X}, number = {7}, year = {2015}, month = {feb 24}, pages = {075310}, title = {Exciton band structure of monolayer {MoS} 2}, volume = {91}, } @article{liuThreebandTightbindingModel2013a, author = {Liu, Gui-Bin and Shan, Wen-Yu and Yao, Yugui and Yao, Wang and Xiao, Di}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.88.085433}, issn = {1098-0121, 1550-235X}, number = {8}, year = {2013}, month = {aug 26}, pages = {085433}, title = {Three-band tight-binding model for monolayers of group-{VIB} transition metal dichalcogenides}, volume = {88}, } @article{giannozziQUANTUMESPRESSOModular2009, author = {Giannozzi, Paolo and Baroni, Stefano and Bonini, Nicola and Calandra, Matteo and Car, Roberto and Cavazzoni, Carlo and Ceresoli, Davide and Chiarotti, Guido L and Cococcioni, Matteo and Dabo, Ismaila and Dal Corso, Andrea and De Gironcoli, Stefano and Fabris, Stefano and Fratesi, Guido and Gebauer, Ralph and Gerstmann, Uwe and Gougoussis, Christos and Kokalj, Anton and Lazzeri, Michele and Martin-Samos, Layla and Marzari, Nicola and Mauri, Francesco and Mazzarello, Riccardo and Paolini, Stefano and Pasquarello, Alfredo and Paulatto, Lorenzo and Sbraccia, Carlo and Scandolo, Sandro and Sclauzero, Gabriele and Seitsonen, Ari P and Smogunov, Alexander and Umari, Paolo and Wentzcovitch, Renata M}, journal = {Journal of Physics: Condensed Matter}, doi = {10.1088/0953-8984/21/39/395502}, issn = {0953-8984, 1361-648X}, number = {39}, year = {2009}, month = {sep 30}, pages = {395502}, title = {QUANTUM {ESPRESSO}: a modular and open-source software project for quantum simulations of materials}, volume = {21}, } @article{xiaoCoupledSpinValley2012a, author = {Xiao, Di and Liu, Gui-Bin and Feng, Wanxiang and Xu, Xiaodong and Yao, Wang}, journal = {Physical Review Letters}, doi = {10.1103/PhysRevLett.108.196802}, issn = {0031-9007, 1079-7114}, number = {19}, year = {2012}, month = {may 7}, note = {TLDR: It is shown that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls ofspin and valley in these 2D materials.}, pages = {196802}, title = {Coupled {Spin} and {Valley} {Physics} in {Monolayers} of {MoS} 2 and {Other} {Group}-{VI} {Dichalcogenides}}, volume = {108}, } @article{zhuExcitonValleyDynamics2014, author = {Zhu, C. R. and Zhang, K. and Glazov, M. and Urbaszek, B. and Amand, T. and Ji, Z. W. and Liu, B. L. and Marie, X.}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.90.161302}, number = {16}, year = {2014}, month = {oct 6}, note = {publisher: American Physical Society}, pages = {161302}, title = {Exciton valley dynamics probed by {Kerr} rotation in \textdollar{}\textbraceleft{}\textbackslash{}mathrm\textbraceleft{}{WSe}\textbraceright{}\textbraceright{}\textunderscore{}\textbraceleft{}2\textbraceright{}\textdollar{} monolayers}, volume = {90}, } @article{chernikovExcitonBindingEnergy2014, author = {Chernikov, Alexey and Berkelbach, Timothy C. and Hill, Heather M. and Rigosi, Albert and Li, Yilei and Aslan, Burak and Reichman, David R. and Hybertsen, Mark S. and Heinz, Tony F.}, journal = {Physical Review Letters}, doi = {10.1103/PhysRevLett.113.076802}, number = {7}, year = {2014}, month = {aug 13}, note = {publisher: American Physical Society TLDR: Strong but unconventional electron-hole interactions are expected to be ubiquitous in atomically thin materials using a microscopic theory in which the nonlocal nature of the effective dielectric screening modifies the functional form of the Coulomb interaction.}, pages = {076802}, title = {Exciton {Binding} {Energy} and {Nonhydrogenic} {Rydberg} {Series} in {Monolayer} \textdollar{}\textbraceleft{}\textbackslash{}mathrm\textbraceleft{}{WS}\textbraceright{}\textbraceright{}\textunderscore{}\textbraceleft{}2\textbraceright{}\textdollar{}}, volume = {113}, } @article{makControlValleyPolarization2012, author = {Mak, Kin Fai and He, Keliang and Shan, Jie and Heinz, Tony F.}, journal = {Nature Nanotechnology}, doi = {10.1038/nnano.2012.96}, issn = {1748-3387, 1748-3395}, number = {8}, year = {2012}, month = {8}, note = {arXiv: 1205.1822}, pages = {494--498}, title = {Control of valley polarization in monolayer {MoS2} by optical helicity}, volume = {7}, } @article{zhangDirectImagingBand2014, author = {Zhang, Chendong and Johnson, Amber and Hsu, Chang-Lung and Li, Lain-Jong and Shih, Chih-Kang}, journal = {Nano Letters}, doi = {10.1021/nl501133c}, issn = {1530-6984, 1530-6992}, number = {5}, year = {2014}, month = {may 14}, pages = {2443--2447}, title = {Direct {Imaging} of {Band} {Profile} in {Single} {Layer} {MoS}\textsubscript{2} on {Graphite}: Quasiparticle {Energy} {Gap}, {Metallic} {Edge} {States}, and {Edge} {Band} {Bending}}, volume = {14}, } @article{zhangAbsorptionLightExcitons2014, author = {Zhang, Changjian and Wang, Haining and Chan, Weimin and Manolatou, Christina and Rana, Farhan}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.89.205436}, issn = {1098-0121, 1550-235X}, number = {20}, year = {2014}, month = {may 29}, pages = {205436}, title = {Absorption of light by excitons and trions in monolayers of metal dichalcogenide {Mo} {S} 2 : Experiments and theory}, volume = {89}, } @article{makTightlyBoundTrions2013, author = {Mak, Kin Fai and He, Keliang and Lee, Changgu and Lee, Gwan Hyoung and Hone, James and Heinz, Tony F. and Shan, Jie}, journal = {Nature Materials}, doi = {10.1038/nmat3505}, issn = {1476-4660}, number = {3}, year = {2013}, month = {3}, note = {number: 3 publisher: Nature Publishing Group TLDR: The spectroscopic identification in a monolayer MoS(2) field-effect transistor of tightly bound negative trions, a quasiparticle composed of two electrons and a hole is reported, which has no analogue in conventional semiconductors.}, pages = {207--211}, title = {Tightly bound trions in monolayer {MoS2}}, volume = {12}, } @article{vaqueroExcitonsTrionsRydberg2020a, author = {Vaquero, Daniel and Cleric{\` o}, Vito and Salvador-S{\' a}nchez, Juan and Mart{\' i}n-Ramos, Adri{\' a}n and D{\' i}az, Elena and Dom{\' i}nguez-Adame, Francisco and Meziani, Yahya M. and Diez, Enrique and Quereda, Jorge}, journal = {Communications Physics}, doi = {10.1038/s42005-020-00460-9}, issn = {2399-3650}, number = {1}, year = {2020}, month = {oct 30}, pages = {194}, title = {Excitons, trions and {Rydberg} states in monolayer {MoS2} revealed by low-temperature photocurrent spectroscopy}, volume = {3}, } @article{vaqueroExcitonsTrionsRydberg2020, author = {Vaquero, Daniel and Cleric{\` o}, Vito and Salvador-S{\' a}nchez, Juan and Mart{\' i}n-Ramos, Adri{\' a}n and D{\' i}az, Elena and Dom{\' i}nguez-Adame, Francisco and Meziani, Yahya M. and Diez, Enrique and Quereda, Jorge}, journal = {Communications Physics}, doi = {10.1038/s42005-020-00460-9}, issn = {2399-3650}, number = {1}, year = {2020}, month = {oct 30}, note = {number: 1 publisher: Nature Publishing Group}, pages = {1--8}, title = {Excitons, trions and {Rydberg} states in monolayer {MoS2} revealed by low-temperature photocurrent spectroscopy}, volume = {3}, } @article{caoValleyselectiveCircularDichroism2012, note = {[Online; accessed 2019-03-16]}, author = {Cao, Ting and Wang, Gang and Han, Wenpeng and Ye, Huiqi and Zhu, Chuanrui and Shi, Junren and Niu, Qian and Tan, Pingheng and Wang, Enge and Liu, Baoli and Feng, Ji}, journal = {Nature Communications}, doi = {10.1038/ncomms1882}, issn = {2041-1723}, number = {1}, year = {2012}, month = {1}, title = {Valley-selective circular dichroism of monolayer molybdenum disulphide}, url = {http://www.nature.com/articles/ncomms1882}, howpublished = {http://www.nature.com/articles/ncomms1882}, volume = {3}, } @article{molasBrighteningDarkExcitons2017, author = {Molas, M R and Faugeras, C and Slobodeniuk, A O and Nogajewski, K and Bartos, M and Basko, D M and Potemski, M}, journal = {2D Materials}, doi = {10.1088/2053-1583/aa5521}, issn = {2053-1583}, number = {2}, year = {2017}, month = {jan 16}, note = {rate: -1}, pages = {021003}, title = {Brightening of dark excitons in monolayers of semiconducting transition metal dichalcogenides}, volume = {4}, } @article{robertMeasurementSpinforbiddenDark2020, author = {Robert, C. and Han, B. and Kapuscinski, P. and Delhomme, A. and Faugeras, C. and Amand, T. and Molas, M. 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L. and Kim, P.}, journal = {Physical Review Letters}, doi = {10.1103/PhysRevLett.99.246803}, issn = {0031-9007, 1079-7114}, number = {24}, year = {2007}, month = {dec 14}, pages = {246803}, title = {Measurement of {Scattering} {Rate} and {Minimum} {Conductivity} in {Graphene}}, volume = {99}, } @article{papajMagnusHallEffect2019, author = {Papaj, Micha\l{} and Fu, Liang}, journal = {Physical Review Letters}, doi = {10.1103/PhysRevLett.123.216802}, issn = {0031-9007, 1079-7114}, number = {21}, year = {2019}, month = {nov 22}, note = {TLDR: It is shown that in the ballistic limit the Magnus Hall conductance measures the distribution of the Berry curvature on the Fermi surface.}, pages = {216802}, title = {Magnus {Hall} {Effect}}, volume = {123}, } @article{wangVanWaalsContacts2019, author = {Wang, Yan and Kim, Jong Chan and Wu, Ryan J. and Martinez, Jenny and Song, Xiuju and Yang, Jieun and Zhao, Fang and Mkhoyan, Andre and Jeong, Hu Young and Chhowalla, Manish}, journal = {Nature}, doi = {10.1038/s41586-019-1052-3}, issn = {0028-0836, 1476-4687}, number = {7750}, year = {2019}, month = {4}, pages = {70--74}, title = {Van der {Waals} contacts between three-dimensional metals and two-dimensional semiconductors}, volume = {568}, } @book{uchinoFerroelectricDevices2018, author = {Uchino, Kenji}, isbn = {978-1-4398-0376-9}, year = {2018}, month = {sep 3}, note = {Google-Books-ID: 5QvLBQAAQBAJ}, publisher = {CRC Press}, title = {Ferroelectric {Devices}}, } @article{morozovskaPyroelectricResponseFerroelectric2010, author = {Morozovska, A. N. and Eliseev, E. A. and Svechnikov, G. S. and Kalinin, S. V.}, journal = {Journal of Applied Physics}, doi = {10.1063/1.3474964}, issn = {0021-8979}, number = {4}, year = {2010}, month = {aug 15}, note = {publisher: American Institute of Physics}, pages = {042009}, title = {Pyroelectric response of ferroelectric nanowires: Size effect and electric energy harvesting}, volume = {108}, } @article{chaiNonvolatileFerroelectricFieldeffect2020, author = {Chai, Xiaojie and Jiang, Jun and Zhang, Qinghua and Hou, Xu and Meng, Fanqi and Wang, Jie and Gu, Lin and Zhang, David Wei and Jiang, An Quan}, journal = {Nature Communications}, doi = {10.1038/s41467-020-16623-9}, issn = {2041-1723}, number = {1}, year = {2020}, month = {jun 4}, note = {number: 1 publisher: Nature Publishing Group}, pages = {2811}, title = {Nonvolatile ferroelectric field-effect transistors}, volume = {11}, } @article{siFerroelectricSemiconductorFieldeffect2019, author = {Si, Mengwei and Saha, Atanu K. and Gao, Shengjie and Qiu, Gang and Qin, Jingkai and Duan, Yuqin and Jian, Jie and Niu, Chang and Wang, Haiyan and Wu, Wenzhuo and Gupta, Sumeet K. and Ye, Peide D.}, journal = {Nature Electronics}, doi = {10.1038/s41928-019-0338-7}, issn = {2520-1131}, number = {12}, year = {2019}, month = {12}, note = {number: 12 publisher: Nature Publishing Group rate: -1}, pages = {580--586}, title = {A ferroelectric semiconductor field-effect transistor}, volume = {2}, } @article{pengExploitingBulkPhotovoltaic2020, author = {Peng, Yu and Liu, Xitao and Sun, Zhihua and Ji, Chengmin and Li, Lina and Wu, Zhenyue and Wang, Sasa and Yao, Yunpeng and Hong, Maochun and Luo, Junhua}, journal = {Angewandte Chemie International Edition}, doi = {10.1002/anie.201915094}, issn = {1521-3773}, number = {10}, year = {2020}, note = {\textunderscore{}eprint: https://onlinelibrary.wiley.com/doi/pdf/10.1002/anie.201915094}, pages = {3933--3937}, title = {Exploiting the {Bulk} {Photovoltaic} {Effect} in a 2D {Trilayered} {Hybrid} {Ferroelectric} for {Highly} {Sensitive} {Polarized} {Light} {Detection}}, volume = {59}, } @article{changDiscoveryRobustInplane2016, author = {Chang, Kai and Liu, Junwei and Lin, Haicheng and Wang, Na and Zhao, Kun and Zhang, Anmin and Jin, Feng and Zhong, Yong and Hu, Xiaopeng and Duan, Wenhui and Zhang, Qingming and Fu, Liang and Xue, Qi-Kun and Chen, Xi and Ji, Shuai-Hua}, journal = {Science}, doi = {10.1126/science.aad8609}, issn = {0036-8075, 1095-9203}, number = {6296}, year = {2016}, month = {jul 15}, note = {TLDR: The discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1--unit cell (UC) limit is reported, which may enable the miniaturization of ferroelectric devices.}, pages = {274--278}, title = {Discovery of robust in-plane ferroelectricity in atomic-thick {SnTe}}, volume = {353}, } @article{shiSymmetryBreakingMolecular2016, author = {Shi, Ping-Ping and Tang, Yuan-Yuan and Li, Peng-Fei and Liao, Wei-Qiang and Wang, Zhong-Xia and Ye, Qiong and Xiong, Ren-Gen}, journal = {Chemical Society Reviews}, doi = {10.1039/C5CS00308C}, issn = {0306-0012, 1460-4744}, number = {14}, year = {2016}, pages = {3811--3827}, title = {Symmetry breaking in molecular ferroelectrics}, volume = {45}, } @article{shirodkarEmergenceFerroelectricityMetalSemiconductor2014, author = {Shirodkar, Sharmila N. and Waghmare, Umesh V.}, journal = {Physical Review Letters}, doi = {10.1103/PhysRevLett.112.157601}, issn = {0031-9007, 1079-7114}, number = {15}, year = {2014}, month = {apr 15}, pages = {157601}, title = {Emergence of {Ferroelectricity} at a {Metal}-{Semiconductor} {Transition} in a 1 {T} {Monolayer} of {MoS} 2}, volume = {112}, } @article{lipatovDirectObservationFerroelectricity2022a, author = {Lipatov, Alexey and Chaudhary, Pradeep and Guan, Zhao and Lu, Haidong and Li, Gang and Cr{\' e}gut, Olivier and Dorkenoo, Kokou Dodzi and Proksch, Roger and Cherifi-Hertel, Salia and Shao, Ding-Fu and Tsymbal, Evgeny Y. and {\' I}{\~ n}iguez, Jorge and Sinitskii, Alexander and Gruverman, Alexei}, journal = {npj 2D Materials and Applications}, doi = {10.1038/s41699-022-00298-5}, issn = {2397-7132}, number = {1}, year = {2022}, month = {12}, pages = {18}, title = {Direct observation of ferroelectricity in two-dimensional {MoS2}}, volume = {6}, } @article{yuanRoomtemperatureFerroelectricityMoTe22019, author = {Yuan, Shuoguo and Luo, Xin and Chan, Hung Lit and Xiao, Chengcheng and Dai, Yawei and Xie, Maohai and Hao, Jianhua}, journal = {Nature Communications}, doi = {10.1038/s41467-019-09669-x}, issn = {2041-1723}, number = {1}, year = {2019}, month = {12}, pages = {1775}, title = {Room-temperature ferroelectricity in {MoTe2} down to the atomic monolayer limit}, volume = {10}, } @article{yangFerroelectricTransistorsBased2023, author = {Yang, Tilo H. and Liang, Bor-Wei and Hu, Hsiang-Chi and Chen, Fu-Xiang and Ho, Sheng-Zhu and Chang, Wen-Hao and Yang, Liu and Lo, Han-Chieh and Kuo, Tzu-Hao and Chen, Jyun-Hong and Lin, Po-Yen and Simbulan, Kristan Bryan and Luo, Zhao-Feng and Chang, Alice Chinghsuan and Kuo, Yi-Hao and Ku, Yu-Seng and Chen, Yi-Cheng and Huang, You-Jia and Chang, Yu-Chen and Chiang, Yu-Fan and Lu, Ting-Hua and Lee, Min-Hung and Li, Kai-Shin and Wu, Menghao and Chen, Yi-Chun and Lin, Chun-Liang and Lan, Yann-Wen}, journal = {Nature Electronics}, doi = {10.1038/s41928-023-01073-0}, issn = {2520-1131}, number = {1}, year = {2023}, month = {nov 30}, pages = {29--38}, title = {Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide}, volume = {7}, } @article{feiFerroelectricSwitchingTwodimensional2018, author = {Fei, Zaiyao and Zhao, Wenjin and Palomaki, Tauno A. and Sun, Bosong and Miller, Moira K. and Zhao, Zhiying and Yan, Jiaqiang and Xu, Xiaodong and Cobden, David H.}, journal = {Nature}, doi = {10.1038/s41586-018-0336-3}, issn = {0028-0836, 1476-4687}, number = {7718}, year = {2018}, month = {8}, pages = {336--339}, title = {Ferroelectric switching of a two-dimensional metal}, volume = {560}, } @article{westonInterfacialFerroelectricityMarginally2022, author = {Weston, Astrid and Castanon, Eli G. and Enaldiev, Vladimir and Ferreira, F{\' a}bio and Bhattacharjee, Shubhadeep and Xu, Shuigang and Corte-Le{\' o}n, H{\' e}ctor and Wu, Zefei and Clark, Nicholas and Summerfield, Alex and Hashimoto, Teruo and Gao, Yunze and Wang, Wendong and Hamer, Matthew and Read, Harriet and Fumagalli, Laura and Kretinin, Andrey V. and Haigh, Sarah J. and Kazakova, Olga and Geim, A. K. and Fal\textquoteright{}ko, Vladimir I. and Gorbachev, Roman}, journal = {Nature Nanotechnology}, doi = {10.1038/s41565-022-01072-w}, issn = {1748-3387, 1748-3395}, number = {4}, year = {2022}, month = {4}, pages = {390--395}, title = {Interfacial ferroelectricity in marginally twisted 2D semiconductors}, volume = {17}, } @article{wangInterfacialFerroelectricityRhombohedralstacked2022, author = {Wang, Xirui and Yasuda, Kenji and Zhang, Yang and Liu, Song and Watanabe, Kenji and Taniguchi, Takashi and Hone, James and Fu, Liang and Jarillo-Herrero, Pablo}, journal = {Nature Nanotechnology}, doi = {10.1038/s41565-021-01059-z}, issn = {1748-3387, 1748-3395}, number = {4}, year = {2022}, month = {4}, pages = {367--371}, title = {Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides}, volume = {17}, } @article{heThermallyAssistedNonvolatile2016, author = {He, G. and Ramamoorthy, H. and Kwan, C.-P. and Lee, Y.-H. and Nathawat, J. and Somphonsane, R. and Matsunaga, M. and Higuchi, A. and Yamanaka, T. and Aoki, N. and Gong, Y. and Zhang, X. and Vajtai, R. and Ajayan, P. M. and Bird, J. P.}, journal = {Nano Letters}, doi = {10.1021/acs.nanolett.6b02905}, issn = {1530-6984, 1530-6992}, number = {10}, year = {2016}, month = {oct 12}, pages = {6445--6451}, title = {Thermally {Assisted} {Nonvolatile} {Memory} in {Monolayer} {MoS} \textsubscript{2} {Transistors}}, volume = {16}, } @article{kaushikReversibleHysteresisInversion2017, author = {Kaushik, Naveen and Mackenzie, David M. A. and Thakar, Kartikey and Goyal, Natasha and Mukherjee, Bablu and Boggild, Peter and Petersen, Dirch Hjorth and Lodha, Saurabh}, journal = {npj 2D Materials and Applications}, doi = {10.1038/s41699-017-0038-y}, issn = {2397-7132}, number = {1}, year = {2017}, month = {oct 18}, note = {number: 1 publisher: Nature Publishing Group}, pages = {1--9}, title = {Reversible hysteresis inversion in {MoS2} field effect transistors}, volume = {1}, } @article{dibartolomeoHysteresisTransferCharacteristics2017a, author = {Di Bartolomeo, Antonio and Genovese, Luca and Giubileo, Filippo and Iemmo, Laura and Luongo, Giuseppe and Foller, Tobias and Schleberger, Marika}, journal = {2D Materials}, doi = {10.1088/2053-1583/aa91a7}, issn = {2053-1583}, number = {1}, year = {2017}, month = {oct 23}, note = {rate: 0}, pages = {015014}, title = {Hysteresis in the transfer characteristics of {MoS} \textsubscript{2} transistors}, volume = {5}, } @article{lateHysteresisSingleLayerMoS2012, author = {Late, Dattatray J. and Liu, Bin and Matte, H. S. S. Ramakrishna and Dravid, Vinayak P. and Rao, C. N. R.}, journal = {ACS Nano}, doi = {10.1021/nn301572c}, issn = {1936-0851, 1936-086X}, number = {6}, year = {2012}, month = {jun 26}, pages = {5635--5641}, title = {Hysteresis in {Single}-{Layer} {MoS} \textsubscript{2} {Field} {Effect} {Transistors}}, volume = {6}, } @article{liScalingBehaviorHysteresis2014, author = {Li, Tao and Du, Gang and Zhang, Baoshun and Zeng, Zhongming}, journal = {Applied Physics Letters}, doi = {10.1063/1.4894865}, issn = {0003-6951}, number = {9}, year = {2014}, month = {sep 5}, pages = {093107}, title = {Scaling behavior of hysteresis in multilayer {MoS2} field effect transistors}, volume = {105}, } @article{shuIntrinsicOriginHysteresis2016a, author = {Shu, Jiapei and Wu, Gongtao and Guo, Yao and Liu, Bo and Wei, Xianlong and Chen, Qing}, journal = {Nanoscale}, doi = {10.1039/C5NR07336G}, issn = {2040-3364, 2040-3372}, number = {5}, year = {2016}, note = {TLDR: The findings indicate that the hysteresis observed comes from the MoS2 itself, revealing an intrinsic origin of the hyesteresisBesides some extrinsic factors, the gate voltage sweep range, sweep direction, sweep time and loading history all affect the hysteiners observed in the transfer curves.}, pages = {3049--3056}, title = {The intrinsic origin of hysteresis in {MoS} \textsubscript{2} field effect transistors}, volume = {8}, } @article{Li2012From, author = {Li, Hong and Zhang, Qing and Yap, Chin Chong Ray and Tay, Beng Kang and Edwin, Teo Hang Tong and Olivier, Aurelien and Baillargeat, Dominique}, journal = {Advanced Functional Materials}, doi = {https://doi.org/10.1002/adfm.201102111}, number = {7}, year = {2012}, note = {\textunderscore{}eprint: https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201102111}, pages = {1385--1390}, title = {From {Bulk} to {Monolayer} {MoS2}: Evolution of {Raman} {Scattering}}, url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201102111}, howpublished = {https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.201102111}, volume = {22}, } @article{splendianiEmergingPhotoluminescenceMonolayer2010b, author = {Splendiani, Andrea and Sun, Liang and Zhang, Yuanbo and Li, Tianshu and Kim, Jonghwan and Chim, Chi-Yung and Galli, Giulia and Wang, Feng}, journal = {Nano Letters}, doi = {10.1021/nl903868w}, issn = {1530-6984}, number = {4}, year = {2010}, month = {apr 14}, note = {publisher: American Chemical Society}, pages = {1271--1275}, title = {Emerging {Photoluminescence} in {Monolayer} {MoS2}}, volume = {10}, } @article{allainElectricalContactsTwodimensional2015, author = {Allain, Adrien and Kang, Jiahao and Banerjee, Kaustav and Kis, Andras}, journal = {Nature Materials}, doi = {10.1038/nmat4452}, issn = {1476-1122, 1476-4660}, number = {12}, year = {2015}, month = {12}, note = {TLDR: A comprehensive treatment of the physics of such interfaces at the contact region is presented and recent progress towards realizing optimal contacts for two-dimensional materials is discussed.}, pages = {1195--1205}, title = {Electrical contacts to two-dimensional semiconductors}, volume = {14}, } @article{shenUltralowContactResistance2021, author = {Shen, Pin-Chun and Su, Cong and Lin, Yuxuan and Chou, Ang-Sheng and Cheng, Chao-Ching and Park, Ji-Hoon and Chiu, Ming-Hui and Lu, Ang-Yu and Tang, Hao-Ling and Tavakoli, Mohammad Mahdi and Pitner, Gregory and Ji, Xiang and Cai, Zhengyang and Mao, Nannan and Wang, Jiangtao and Tung, Vincent and Li, Ju and Bokor, Jeffrey and Zettl, Alex and Wu, Chih-I and Palacios, Tom{\' a}s and Li, Lain-Jong and Kong, Jing}, journal = {Nature}, doi = {10.1038/s41586-021-03472-9}, issn = {0028-0836, 1476-4687}, number = {7858}, year = {2021}, month = {may 13}, note = {TLDR: Ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides (TMDs) is reported where the MIGS is sufficiently suppressed and degenerate states in the TMD are spontaneously formed in contact with bismUTH, enabling further device downscaling and extending Moore's law.}, pages = {211--217}, title = {Ultralow contact resistance between semimetal and monolayer semiconductors}, volume = {593}, } @article{lanScalableFabricationComplementary2019, author = {Lan, Yann-Wen and Chen, Po-Chun and Lin, Yun-Yan and Li, Ming-Yang and Li, Lain-Jong and Tu, Yu-Ling and Yang, Fu-Liang and Chen, Min-Cheng and Li, Kai-Shin}, journal = {Nanoscale Horizons}, doi = {10.1039/C8NH00419F}, issn = {2055-6756, 2055-6764}, number = {3}, year = {2019}, pages = {683--688}, title = {Scalable fabrication of a complementary logic inverter based on {MoS} \textsubscript{2} fin-shaped field effect transistors}, volume = {4}, } @article{radisavljevicSinglelayerMoS2Transistors2011a, author = {Radisavljevic, B. and Radenovic, A. and Brivio, J. and Giacometti, V. and Kis, A.}, journal = {Nature Nanotechnology}, doi = {10.1038/nnano.2010.279}, issn = {1748-3387, 1748-3395}, number = {3}, year = {2011}, month = {3}, note = {TLDR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.}, pages = {147--150}, title = {Single-layer {MoS2} transistors}, volume = {6}, } @article{novoselovTwodimensionalAtomicCrystals2005, author = {Novoselov, K S and Jiang, D and Schedin, F and Booth, T J and Khotkevich, V V and Morozov, S V and Geim, A K}, journal = {Proceedings of the National Academy of Sciences}, doi = {10.1073/pnas.0502848102}, number = {30}, year = {2005}, pages = {10451--10453}, title = {Two-dimensional atomic crystals}, volume = {102}, } @article{radisavljevicMobilityEngineeringMetal2013a, author = {Radisavljevic, Branimir and Kis, Andras}, journal = {Nature Materials}, doi = {10.1038/nmat3687}, issn = {1476-1122, 1476-4660}, number = {9}, year = {2013}, month = {9}, pages = {815--820}, title = {Mobility engineering and a metal--insulator transition in monolayer {MoS2}}, volume = {12}, } @article{liApproachingQuantumLimit2023, author = {Li, Weisheng and Gong, Xiaoshu and Yu, Zhihao and Ma, Liang and Sun, Wenjie and Gao, Si and K{\" o}ro{\u g}lu, {\c C}a{\u g}\i{}l and Wang, Wenfeng and Liu, Lei and Li, Taotao and Ning, Hongkai and Fan, Dongxu and Xu, Yifei and Tu, Xuecou and Xu, Tao and Sun, Litao and Wang, Wenhui and Lu, Junpeng and Ni, Zhenhua and Li, Jia and Duan, Xidong and Wang, Peng and Nie, Yuefeng and Qiu, Hao and Shi, Yi and Pop, Eric and Wang, Jinlan and Wang, Xinran}, journal = {Nature}, doi = {10.1038/s41586-022-05431-4}, issn = {0028-0836, 1476-4687}, number = {7943}, year = {2023}, month = {jan 12}, pages = {274--279}, title = {Approaching the quantum limit in two-dimensional semiconductor contacts}, volume = {613}, } @inproceedings{yuHighmobilityLowpower2D2018, address = {San Francisco, CA}, author = {Yu, Zhihao and Zhu, Ying and Li, Weisheng and Shi, Yi and Zhang, Gang and Chai, Yang and Wang, Xinran}, booktitle = {2018 {IEEE} {International} {Electron} {Devices} {Meeting} ({IEDM})}, doi = {10.1109/IEDM.2018.8614644}, isbn = {978-1-7281-1987-8}, year = {2018}, month = {12}, note = {TLDR: For low-power applications, hysteresis-free MoS2 negative capacitance FETs (NCFETs) are demonstrated using ferroelectric HtZrOx(HZO) as gate dielectric, achieving sub-60m V/dec subthreshold slope and it is concluded that the steep slope is indeed due to NC effects rather than ferro electric switching of HZO.}, pages = {22.4.1--22.4.4}, organization = {IEEE}, title = {Toward {High}-mobility and {Low}-power 2D {MoS2} {Field}-effect {Transistors}}, url = {https://ieeexplore.ieee.org/document/8614644/}, } @article{liEnhancedValleyZeeman2020, author = {Li, Qi and Zhao, Xiaoxu and Deng, Longjiang and Shi, Zhongtai and Liu, Sheng and Wei, Qilin and Zhang, Linbo and Cheng, Yingchun and Zhang, Li and Lu, Haipeng and Gao, Weibo and Huang, Wei and Qiu, Cheng-Wei and Xiang, Gang and Pennycook, Stephen John and Xiong, Qihua and Loh, Kian Ping and Peng, Bo}, journal = {ACS Nano}, doi = {10.1021/acsnano.0c00291}, issn = {1936-0851, 1936-086X}, number = {4}, year = {2020}, month = {apr 28}, pages = {4636--4645}, title = {Enhanced {Valley} {Zeeman} {Splitting} in {Fe}-{Doped} {Monolayer} {MoS} \textsubscript{2}}, volume = {14}, } @article{marinovResolvingSpinSplitting2017, author = {Marinov, Kolyo and Avsar, Ahmet and Watanabe, Kenji and Taniguchi, Takashi and Kis, Andras}, journal = {Nature Communications}, doi = {10.1038/s41467-017-02047-5}, issn = {2041-1723}, number = {1}, year = {2017}, month = {dec 5}, note = {number: 1 publisher: Nature Publishing Group}, pages = {1938}, title = {Resolving the spin splitting in the conduction band of monolayer {MoS2}}, volume = {8}, } @article{liuChargeFerroelectricTransition2020, author = {Liu, Xiaochi and Zhou, Xuefan and Pan, Yuchuan and Yang, Junqiang and Xiang, Haiyan and Yuan, Yahua and Liu, Song and Luo, Hang and Zhang, Dou and Sun, Jian}, journal = {Advanced Materials}, doi = {10.1002/adma.202004813}, issn = {0935-9648, 1521-4095}, number = {49}, year = {2020}, month = {12}, pages = {2004813}, title = {Charge--{Ferroelectric} {Transition} in {Ultrathin} {Na} \textsubscript{0.5} {Bi} \textsubscript{4.5} {Ti} \textsubscript{4} {O} \textsubscript{15} {Flakes} {Probed} via a {DualGated} {Full} van der {Waals} {Transistor}}, volume = {32}, } @article{huangCorrelationStructurePhonon2014, author = {Huang, Liang Feng and Gong, Peng Lai and Zeng, Zhi}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.90.045409}, issn = {1098-0121, 1550-235X}, number = {4}, year = {2014}, month = {jul 15}, pages = {045409}, title = {Correlation between structure, phonon spectra, thermal expansion, and thermomechanics of single-layer {MoS} 2}, volume = {90}, } @article{taubeTemperatureDependentNonlinearPhonon2014, author = {Taube, Andrzej and Judek, Jaros\l{}aw and Jastrz{\k e}bski, Cezariusz and Duzynska, Anna and {\' S}witkowski, Krzysztof and Zdrojek, Mariusz}, journal = {ACS Applied Materials \& Interfaces}, doi = {10.1021/am502359k}, issn = {1944-8244, 1944-8252}, number = {12}, year = {2014}, month = {jun 25}, note = {TLDR: On the basis of Raman measurements, local temperature change under laser heating power at different global temperatures is derived and can help to solve the problem of heat dissipation, which is crucial for use in the next generation of nanoelectronic devices.}, pages = {8959--8963}, title = {Temperature-{Dependent} {Nonlinear} {Phonon} {Shifts} in a {Supported} {MoS} \textsubscript{2} {Monolayer}}, volume = {6}, } @article{thripuranthakaTemperatureDependentRaman2014, author = {Thripuranthaka, M. and Kashid, Ranjit V. and Sekhar Rout, Chandra and Late, Dattatray J.}, journal = {Applied Physics Letters}, doi = {10.1063/1.4866782}, issn = {0003-6951, 1077-3118}, number = {8}, year = {2014}, month = {feb 24}, pages = {081911}, title = {Temperature dependent {Raman} spectroscopy of 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F. and Schmidt-Kaler, Ferdinand and Schmiegelow, Christian T.}, journal = {Physical Review Letters}, doi = {10.1103/PhysRevLett.119.253203}, issn = {0031-9007, 1079-7114}, number = {25}, year = {2017}, month = {dec 20}, note = {TLDR: This model matches the experimental data and excludes by 11 standard deviations the approximation of a complete transverse field in the case of twisted light having opposite orbital and spin angular momenta.}, pages = {253203}, title = {Twisted-{Light}--{Ion} {Interaction}: The {Role} of {Longitudinal} {Fields}}, volume = {119}, } @article{zhanTrappingMetallicRayleigh2004, author = {Zhan, Qiwen}, journal = {Optics Express}, doi = {10.1364/OPEX.12.003377}, issn = {1094-4087}, number = {15}, year = {2004}, note = {TLDR: Numerical studies show that optical tweezers using radial polarization can stably trap metallic particles in 3-dimension due to the spatial separation of the gradient force and scattering/absorption forces.}, pages = {3377}, title = {Trapping metallic {Rayleigh} particles with radial polarization}, volume = {12}, } @article{gibsonFreespaceInformationTransfer2004, author = {Gibson, Graham and Courtial, Johannes and Padgett, Miles J. and Vasnetsov, Mikhail and Pas'ko, Valeriy and Barnett, Stephen M. and Franke-Arnold, Sonja}, journal = {Optics Express}, doi = {10.1364/OPEX.12.005448}, issn = {1094-4087}, number = {22}, year = {2004}, note = {TLDR: The transfer of information encoded as orbital angular momentum states of a light beam is demonstrated, which is resistant to eavesdropping and gives an experimental insight into the effects of aperturing and misalignment of the beam on the OAM measurement and demonstrates the uncertainty relationship for OAM.}, pages = {5448}, title = {Free-space information transfer using light beams carrying orbital angular momentum}, volume = {12}, } @article{erhardTwistedPhotonsNew2017, author = {Erhard, Manuel and Fickler, Robert and Krenn, Mario and Zeilinger, Anton}, journal = {Light: 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@article{huTwodimensionalTransitionMetal2018, author = {Hu, Zehua and Wu, Zhangting and Han, Cheng and He, Jun and Ni, Zhenhua and Chen, Wei}, journal = {Chemical Society Reviews}, doi = {10.1039/C8CS00024G}, issn = {0306-0012, 1460-4744}, number = {9}, year = {2018}, note = {TLDR: Two-dimensional transition metal dichalcogenides (TMDCs) have been considered as promising candidates for next generation nanoelectronics and their corresponding applications in electronic and optoelectronic devices.}, pages = {3100--3128}, title = {Two-dimensional transition metal dichalcogenides: interface and defect engineering}, volume = {47}, } @article{hossenDefectsDefectEngineering2024, author = {Hossen, Moha Feroz and Shendokar, Sachin and Aravamudhan, Shyam}, journal = {Nanomaterials}, doi = {10.3390/nano14050410}, issn = {2079-4991}, number = {5}, year = {2024}, month = {feb 23}, pages = {410}, title = {Defects and {Defect} {Engineering} of {Two}-{Dimensional} {Transition} {Metal} {Dichalcogenide} (2D {TMDC}) {Materials}}, volume = {14}, } @article{hoFiniteAreaMembraneMetasurfaces2024, author = {Ho, Ya-Lun and Fong, Chee Fai and Wu, Yen-Ju and Konishi, Kuniaki and Deng, Chih-Zong and Fu, Jui-Han and Kato, Yuichiro K. and Tsukagoshi, Kazuhito and Tung, Vincent and Chen, Chun-Wei}, journal = {ACS Nano}, doi = {10.1021/acsnano.4c05560}, issn = {1936-0851, 1936-086X}, number = {35}, year = {2024}, month = {sep 3}, pages = {24173--24181}, title = {Finite-{Area} {Membrane} {Metasurfaces} for {Enhancing} {Light}-{Matter} {Coupling} in {Monolayer} {Transition} {Metal} {Dichalcogenides}}, volume = {18}, } @article{liTailoringMoSExciton2017, author = {Li, Ziwei and Li, Yu and Han, Tianyang and Wang, Xingli and Yu, Ying and Tay, Bengkang and Liu, Zheng and Fang, Zheyu}, journal = {ACS Nano}, doi = {10.1021/acsnano.6b06834}, issn = {1936-0851, 1936-086X}, number = {2}, year = {2017}, month = {feb 28}, note = {TLDR: The results provide a way to manipulate MoS2 light-matter interaction actively and can be further applied in the spin-dependent light-emitting devices at the nanoscale.}, pages = {1165--1171}, title = {Tailoring {MoS} \textsubscript{2} {Exciton}--{Plasmon} {Interaction} by {Optical} {Spin}--{Orbit} {Coupling}}, volume = {11}, } @article{linElectricallyTunableDramatically2022, author = {Lin, WeiHsiang and Wu, Pin Chieh and Akbari, Hamidreza and Rossman, George R. and Yeh, NaiChang and Atwater, Harry A.}, journal = {Advanced Materials}, doi = {10.1002/adma.202104863}, issn = {0935-9648, 1521-4095}, number = {3}, year = {2022}, month = {1}, note = {TLDR: The manifestation of electrical tunibility in the valley-polarized emission from WS2 -PAS heterostructures presents a new strategy towards harnessing valley excitons for application in ultrathin valleytronic devices.}, pages = {2104863}, title = {Electrically {Tunable} and {Dramatically} {Enhanced} {ValleyPolarized} {Emission} of {Monolayer} {WS}\textsubscript{2} at {Room} {Temperature} with {Plasmonic} {Archimedes} {Spiral} {Nanostructures}}, volume = {34}, } @article{premasiriTuningSpinOrbit2019, author = {Premasiri, Kasun and Gao, Xuan P A}, journal = {Journal of Physics: Condensed Matter}, doi = {10.1088/1361-648X/ab04c7}, issn = {0953-8984, 1361-648X}, number = {19}, year = {2019}, month = {may 15}, note = {TLDR: This work reviews the recent advances in tuning spin-orbit coupling of 2D materials which are of notable importance to the progression of spintronics.}, pages = {193001}, title = {Tuning spin--orbit coupling in 2D materials for spintronics: a topical review}, volume = {31}, } @article{ominatoValleyDependentSpinTransport2020, author = {Ominato, Yuya and Fujimoto, Junji and Matsuo, Mamoru}, journal = {Physical Review Letters}, doi = {10.1103/PhysRevLett.124.166803}, issn = {0031-9007, 1079-7114}, number = {16}, year = {2020}, month = {apr 23}, note = {TLDR: The results indicate that spin excitations with spin-valley coupling lead to both valley and spin transport, which is promising for future low-consumption nanodevice applications.}, pages = {166803}, title = {Valley-{Dependent} {Spin} {Transport} in {Monolayer} {Transition}-{Metal} {Dichalcogenides}}, volume = {124}, } @article{garadkarMoS2PreparationTheir2009, author = {Garadkar, K.M. and Patil, A.A. and Hankare, P.P. and Chate, P.A. and Sathe, D.J. and Delekar, S.D.}, journal = {Journal of Alloys and Compounds}, doi = {10.1016/j.jallcom.2009.08.069}, issn = {09258388}, number = {1-2}, year = {2009}, month = {11}, pages = {786--789}, title = {MoS2: Preparation and their characterization}, volume = {487}, } @article{backGiantParamagnetismInducedValley2017, author = {Back, Patrick and Sidler, Meinrad and Cotlet, Ovidiu and Srivastava, Ajit and Takemura, Naotomo and Kroner, Martin and Imamo{\u g}lu, Atac}, journal = {Physical Review Letters}, doi = {10.1103/PhysRevLett.118.237404}, issn = {0031-9007, 1079-7114}, number = {23}, year = {2017}, month = {jun 9}, note = {TLDR: It is shown that a magnetic field of 7 T leads to a near-complete valley polarization of electrons in a MoSe\textunderscore{}\textbraceleft{}2\textbraceright{} monolayer with a density 1.6\texttimes{}10\textasciicircum{}\textbraceleft{}12\textbraceright{} cm\textasciicircum{}\textbraceleft{}-2], which paves the way for valleytronics applications.}, pages = {237404}, title = {Giant {Paramagnetism}-{Induced} {Valley} {Polarization} of {Electrons} in {Charge}-{Tunable} {Monolayer} {MoSe} 2}, volume = {118}, } @article{sunSpinOrbitSplittingSingleLayer2013, author = {Sun, Linfeng and Yan, Jiaxu and Zhan, Da and Liu, Lei and Hu, Hailong and Li, Hong and Tay, Ben Kang and Kuo, Jer-Lai and Huang, Chung-Che and Hewak, Daniel W. and Lee, Pooi See and Shen, Ze Xiang}, journal = {Physical Review Letters}, doi = {10.1103/PhysRevLett.111.126801}, issn = {0031-9007, 1079-7114}, number = {12}, year = {2013}, month = {sep 17}, note = {TLDR: The triply resonant Raman scattering process found that upon 325 nm laser irradiation, the second order overtone and combination Raman modes of single-layer MoS(2) are dramatically enhanced.}, pages = {126801}, title = {Spin-{Orbit} {Splitting} in {Single}-{Layer} {MoS} 2 {Revealed} by {Triply} {Resonant} {Raman} {Scattering}}, volume = {111}, } @article{eginligilDichroicSpinValley2015, author = {Eginligil, Mustafa and Cao, Bingchen and Wang, Zilong and Shen, Xiaonan and Cong, Chunxiao and Shang, Jingzhi and Soci, Cesare and Yu, Ting}, journal = {Nature Communications}, doi = {10.1038/ncomms8636}, issn = {2041-1723}, number = {1}, year = {2015}, month = {jul 2}, pages = {7636}, title = {Dichroic spin--valley photocurrent in monolayer molybdenum disulphide}, volume = {6}, } @article{kioseoglouValleyPolarizationIntervalley2012, author = {Kioseoglou, G. and Hanbicki, A. 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T. Charlie and Agarwal, Ritesh}, journal = {Nano Letters}, doi = {10.1021/acs.nanolett.7b02245}, issn = {1530-6984, 1530-6992}, number = {7}, year = {2017}, month = {jul 12}, note = {TLDR: Electrical control of exciton-plasmon coupling strengths between strong and weak coupling limits in a two-dimensional semiconductor integrated with plasmonic nanoresonators assembled in a field-effect transistor device by electrostatic doping is demonstrated.}, pages = {4541--4547}, title = {Electrical {Tuning} of {Exciton}--{Plasmon} {Polariton} {Coupling} in {Monolayer} {MoS}\textsubscript{2} {Integrated} with {Plasmonic} {Nanoantenna} {Lattice}}, volume = {17}, } @article{parkEffectsContactMaterial2018, author = {Park, Youngsin and Choi, Soo Ho and Lee, Geunsik and Yang, Woochul and Im, Hyunsik}, journal = {Optical Materials}, doi = {10.1016/j.optmat.2018.08.019}, issn = {09253467}, year = {2018}, month = {10}, pages = {870--873}, title = {Effects of contact material on complex excitonic behaviour of monolayer {MoS2}}, volume = {84}, } @article{hongUltrafastHotCarrier2025, author = {Hong, Chengyun and Kim, Hyundong and Tao, Ye and Lim, Jong Hyeon and Lee, Jin Yong and Kim, Ji-Hee}, journal = {Science Advances}, doi = {10.1126/sciadv.adr1534}, issn = {2375-2548}, number = {1}, year = {2025}, month = {jan 3}, pages = {eadr1534}, title = {Ultrafast hot carrier extraction and diffusion at the {MoS}\textsubscript{2} /{Au} van der {Waals} electrode interface}, volume = {11}, } @article{stierExcitonDiamagneticShifts2016a, author = {Stier, Andreas V. and McCreary, Kathleen M. and Jonker, Berend T. and Kono, Junichiro and Crooker, Scott A.}, journal = {Nature Communications}, doi = {10.1038/ncomms10643}, issn = {2041-1723}, number = {1}, year = {2016}, month = {feb 9}, note = {TLDR: Low-temperature polarized reflection spectroscopy of atomically thin WS2 and MoS2 in high magnetic fields to 65 T is reported, thereby quantifying the valley Zeeman effect in monolayer transition-metal disulphides.}, pages = {10643}, title = {Exciton diamagnetic shifts and valley {Zeeman} effects in monolayer {WS2} and {MoS2} to 65 {Tesla}}, volume = {7}, } @article{xuSpinPseudospinsLayered2014, author = {Xu, Xiaodong and Yao, Wang and Xiao, Di and Heinz, Tony F.}, journal = {Nature Physics}, doi = {10.1038/nphys2942}, issn = {1745-2481}, number = {5}, year = {2014}, month = {5}, note = {number: 5 publisher: Nature Publishing Group}, pages = {343--350}, title = {Spin and pseudospins in layered transition metal dichalcogenides}, volume = {10}, } @article{makControlValleyPolarization2012d, author = {Mak, Kin Fai and He, Keliang and Shan, Jie and Heinz, Tony F.}, journal = {Nature Nanotechnology}, doi = {10.1038/nnano.2012.96}, issn = {1748-3387, 1748-3395}, number = {8}, year = {2012}, month = {8}, note = {TLDR: It is demonstrated that optical pumping with circularly polarized light can achieve complete dynamic valley polarization in monolayer MoS(2) (refs 11, 12), a two-dimensional non-centrosymmetric crystal with direct energy gaps at two valleys.}, pages = {494--498}, title = {Control of valley polarization in monolayer {MoS2} by optical helicity}, volume = {7}, } @article{stierExcitonDiamagneticShifts2016b, author = {Stier, Andreas V. and McCreary, Kathleen M. and Jonker, Berend T. and Kono, Junichiro and Crooker, Scott A.}, journal = {Nature Communications}, doi = {10.1038/ncomms10643}, issn = {2041-1723}, number = {1}, year = {2016}, month = {feb 9}, note = {TLDR: Low-temperature polarized reflection spectroscopy of atomically thin WS2 and MoS2 in high magnetic fields to 65 T is reported, thereby quantifying the valley Zeeman effect in monolayer transition-metal disulphides.}, pages = {10643}, title = {Exciton diamagnetic shifts and valley {Zeeman} effects in monolayer {WS2} and {MoS2} to 65 {Tesla}}, volume = {7}, } @article{ridolfiTightbindingModelMoS22015, author = {Ridolfi, E and Le, D and Rahman, T S and Mucciolo, E R and Lewenkopf, C H}, journal = {Journal of Physics: Condensed Matter}, doi = {10.1088/0953-8984/27/36/365501}, issn = {0953-8984, 1361-648X}, number = {36}, year = {2015}, month = {sep 16}, note = {TLDR: An accurate tight-binding parametrization for the band structure of MoS2 monolayers near the main energy gap is proposed and gives a suitable starting point for realistic large-scale atomistic electronic transport calculations.}, pages = {365501}, title = {A tight-binding model for {MoS}\textsubscript{2} monolayers}, volume = {27}, } @article{kadantsevElectronicStructureSingle2012, author = {Kadantsev, Eugene S. and Hawrylak, Pawel}, journal = {Solid State Communications}, doi = {10.1016/j.ssc.2012.02.005}, issn = {00381098}, number = {10}, year = {2012}, month = {5}, pages = {909--913}, title = {Electronic structure of a single {MoS2} monolayer}, volume = {152}, } @article{liMomentumDarkIntervalleyExciton2019, author = {Li, Zhipeng and Wang, Tianmeng and Jin, Chenhao and Lu, Zhengguang and Lian, Zhen and Meng, Yuze and Blei, Mark and Gao, Mengnan and Taniguchi, Takashi and Watanabe, Kenji and Ren, Tianhui and Cao, Ting and Tongay, Sefaattin and Smirnov, Dmitry and Zhang, Lifa and Shi, Su-Fei}, journal = {ACS Nano}, doi = {10.1021/acsnano.9b06682}, issn = {1936-0851, 1936-086X}, number = {12}, year = {2019}, month = {dec 24}, note = {TLDR: This work reports the unambiguous identification of the momentum-dark, intervalley exciton in monolayer WSe2 through low-temperature magneto-photoluminescence (PL) spectra and adds an exciting quasiparticle for valleytronics.}, pages = {14107--14113}, title = {Momentum-{Dark} {Intervalley} {Exciton} in {Monolayer} {Tungsten} {Diselenide} {Brightened} \textit{via} {Chiral} {Phonon}}, volume = {13}, } @article{quinteiroTheoryOpticalAbsorption2009, author = {Quinteiro, G. F. and Tamborenea, P. I.}, journal = {EPL (Europhysics Letters)}, doi = {10.1209/0295-5075/85/47001}, issn = {0295-5075, 1286-4854}, number = {4}, year = {2009}, month = {2}, pages = {47001}, title = {Theory of the optical absorption of light carrying orbital angular momentum by semiconductors}, volume = {85}, } @article{fengTwistedLightInducedPhotocurrent2022, author = {Feng, Yi-Jie and Simbulan, Kristan Bryan and Yang, Tilo H. and Chen, Ye-Ru and Li, Kai-Shin and Chu, Chia-Jung and Lu, Ting-Hua and Lan, Yann-Wen}, journal = {ACS Nano}, doi = {10.1021/acsnano.2c01944}, issn = {1936-0851, 1936-086X}, number = {6}, year = {2022}, month = {jun 28}, pages = {9297--9303}, title = {Twisted {Light}-{Induced} {Photocurrent} in a {Silicon} {Nanowire} {Field}-{Effect} {Transistor}}, volume = {16}, } @article{konzelmannInteractionOrbitalAngular2019b, author = {Konzelmann, Annika Melissa and Kr{\" u}ger, Sjard Ole and Giessen, Harald}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.100.115308}, issn = {2469-9950, 2469-9969}, number = {11}, year = {2019}, month = {sep 17}, pages = {115308}, title = {Interaction of orbital angular momentum light with {Rydberg} excitons: Modifying dipole selection rules}, volume = {100}, } @article{furchiMechanismsPhotoconductivityAtomically2014b, author = {Furchi, Marco M. and Polyushkin, Dmitry K. and Pospischil, Andreas and Mueller, Thomas}, journal = {Nano Letters}, doi = {10.1021/nl502339q}, issn = {1530-6984, 1530-6992}, number = {11}, year = {2014}, month = {nov 12}, note = {TLDR: A photoconductivity study of biased mono- and bilayer molybdenum disulfide field-effect transistors is reported, which identifies photovoltaic and photoconductive effects, which both show strong photogain.}, pages = {6165--6170}, title = {Mechanisms of {Photoconductivity} in {Atomically} {Thin} {MoS}\textsubscript{2}}, volume = {14}, } @article{simbulanTwistedLightEnhancedPhotovoltaic2021, author = {Simbulan, Kristan Bryan and Feng, Yi-Jie and Chang, Wen-Hao and Lu, Chun-I and Lu, Ting-Hua and Lan, Yann-Wen}, journal = {ACS Nano}, doi = {10.1021/acsnano.1c04902}, issn = {1936-0851}, number = {9}, year = {2021}, month = {sep 28}, note = {publisher: American Chemical Society TLDR: A way of unlocking the potentials of 2D-MoS2 is proposed and the employment of light's OAM for future energy device applications is envisioned, implying enhancements of the photoresponse.}, pages = {14822--14829}, title = {Twisted {Light}-{Enhanced} {Photovoltaic} {Effect}}, volume = {15}, } @article{shimazuAnomalousHysteresisTransfer2015, author = {Shimazu, Yoshihiro and Murata, Kotaro and Toda, Shunichi}, journal = {Japanese Journal of Applied Physics}, doi = {10.7567/JJAP.54.031201}, issn = {1347-4065}, number = {3}, year = {2015}, month = {jan 29}, note = {publisher: IOP Publishing}, pages = {031201}, title = {Anomalous hysteresis below 1 {K} in the transfer characteristics of {MoS2} field effect transistors}, volume = {54}, } @article{xieAnalysisSchottkyBarrier2022, author = {Xie, Jing and Patoary, Naim Md and Zhou, Guantong and Sayyad, Mohammed Yasir and Tongay, Sefaattin and Esqueda, Ivan Sanchez}, journal = {Nanotechnology}, doi = {10.1088/1361-6528/ac55d2}, issn = {0957-4484}, number = {22}, year = {2022}, month = {3}, note = {publisher: IOP Publishing}, pages = {225702}, title = {Analysis of {Schottky} barrier heights and reduced {Fermi}-level pinning in monolayer {CVD}-grown {MoS2} field-effect-transistors}, volume = {33}, } @article{leeElectricalRoleSulfur2023, author = {Lee, Juchan and Kim, Myung Joon and Jeong, Byeong Geun and Kwon, Chan and Cha, Yumin and Choi, Soo Ho and Kim, Ki Kang and Jeong, Mun Seok}, journal = {Applied Surface Science}, doi = {10.1016/j.apsusc.2022.155900}, issn = {01694332}, year = {2023}, month = {3}, pages = {155900}, title = {Electrical role of sulfur vacancies in {MoS2}: Transient current approach}, volume = {613}, } @article{nohStabilityElectronicStructures2014, author = {Noh, Ji-Young and Kim, Hanchul and Kim, Yong-Sung}, journal = {Physical Review B}, doi = {10.1103/PhysRevB.89.205417}, issn = {1098-0121, 1550-235X}, number = {20}, year = {2014}, month = {may 19}, pages = {205417}, title = {Stability and electronic structures of native defects in single-layer {MoS} 2}, volume = {89}, } @article{jadwiszczakMoSMemtransistorsFabricated2019, author = {Jadwiszczak, Jakub and Keane, Darragh and Maguire, Pierce and Cullen, Conor P. and Zhou, Yangbo and Song, Huading and Downing, Clive and Fox, Daniel and McEvoy, Niall and Zhu, Rui and Xu, Jun and Duesberg, Georg S. and Liao, Zhi-Min and Boland, John J. and Zhang, Hongzhou}, journal = {ACS Nano}, doi = {10.1021/acsnano.9b07421}, issn = {1936-0851, 1936-086X}, number = {12}, year = {2019}, month = {dec 24}, note = {TLDR: This work establishes the feasibility of ion irradiation for controllable fabrication of 2D memristive devices with promising key performance parameters such as low power consumption and long-term potentiation and depression with sharp habituation.}, pages = {14262--14273}, title = {MoS \textsubscript{2} {Memtransistors} {Fabricated} by {Localized} {Helium} {Ion} {Beam} {Irradiation}}, volume = {13}, } @inproceedings{thoolControllableDefectEngineering2022, note = {[Online; accessed 2024-09-17]}, address = {Columbus, OH, USA}, author = {Thool, Asmita S. and Roy, Sourodeep and Misra, Abhishek and Chakrabarti, Bhaswar}, booktitle = {2022 {Device} {Research} {Conference} ({DRC})}, doi = {10.1109/DRC55272.2022.9855777}, isbn = {978-1-6654-9883-8}, year = {2022}, month = {jun 26}, pages = {1--2}, organization = {IEEE}, title = {Controllable {Defect} {Engineering} in 2D-{MoS} \textsubscript{2} for high-performance, threshold switching memristive devices}, url = {https://ieeexplore.ieee.org/document/9855777/}, } @inproceedings{spetzlerLateral2DTMDC2022, note = {[Online; accessed 2024-09-17]}, address = {Nangjing, China}, author = {Spetzler, Benjamin and Geng, Zhansong and Rossnagel, Kai and Ziegler, Martin and Schwierz, Frank}, booktitle = {2022 {IEEE} 16th {International} {Conference} on {Solid}-{State} \& {Integrated} {Circuit} {Technology} ({ICSICT})}, doi = {10.1109/ICSICT55466.2022.9963350}, isbn = {978-1-6654-6906-7}, year = {2022}, month = {oct 25}, pages = {1--3}, organization = {IEEE}, title = {Lateral 2D {TMDC} {Memristors} -- {Experiment} and {Modeling}}, url = {https://ieeexplore.ieee.org/document/9963350/}, } @article{shevliakovaFlexoelectricPiezoelectricCoupling2021, author = {Shevliakova, Hanna V. and Yesylevskyy, Semen O. and Kupchak, Ihor and Dovbeshko, Galina I. and Kim, Yunseok and Morozovska, Anna N.}, journal = {Symmetry}, doi = {10.3390/sym13112086}, issn = {2073-8994}, number = {11}, year = {2021}, month = {nov 3}, pages = {2086}, title = {Flexoelectric and {Piezoelectric} {Coupling} in a {Bended} {MoS2} {Monolayer}}, volume = {13}, } @article{xiaoElasticityPiezoelectricityMobility2020, author = {Xiao, Wen-Zhi and Luo, Hai-Jun and Xu, Liang}, journal = {Journal of Physics D: Applied Physics}, doi = {10.1088/1361-6463/ab813a}, issn = {0022-3727, 1361-6463}, number = {24}, year = {2020}, month = {jun 10}, pages = {245301}, title = {Elasticity, piezoelectricity, and mobility in two-dimensional {BiTeI} from a first-principles study}, volume = {53}, } @article{maStudyElectricalProperties2013, author = {Ma, Xi Ying}, journal = {Advanced Materials Research}, doi = {10.4028/www.scientific.net/AMR.651.193}, issn = {1662-8985}, year = {2013}, month = {1}, pages = {193--197}, title = {Study of the {Electrical} {Properties} of {Monolayer} {MoS}\textsubscript{2} {Semiconductor}}, volume = {651}, }