Silicon-micromachined flow sensors

Author: Jiang, Fukang

Year: 1998

Degree: Dissertation (Ph.D.)

Advisor: Tai, Yu-Chong

Committee Member: Unknown, Unknown

Option: Electrical Engineering

DOI: 10.7907/R2QN-SC72

Abstract

NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in .pdf document.

A new generation of silicon-micromachined or micro-electro-mechanical-system (MEMS) sensors for the general purpose of microflow measurement and control is presented here. The first one is a polysilicon hot-wire anemometer made by a combined bulk and surface micromachining process. The new devices feature batch-fabricated freestanding micro polysilicon hot wires that are similar to conventional metal hot wires. Both the theoretical analysis and experimental (steady-state and dynamic) results show that MEMS hot wires have order-of-magnitude better frequency response, finer spatial resolution, and higher sensitivity over conventional hot-wire anemometers.

A novel MEMS thermal shear-stress sensor featuring vacuum-cavity insulation has been developed. The device is a polysilicon wire thermistor embedded in a silicon-nitride diaphragm which sits on top of a vacuum cavity. The vacuum cavity is to improve the thermal isolation between the polysilicon wire and substrate. To characterize the devices, both steady-state and transient heat-transfer theories have been established and used to calibrate wind-tunnel results, temperature sensitivities and frequency responses. Shear-stress sensor array chips have also been developed. Each of the shear-stress imagers has more than 100 sensors integrated on a 1x2.85 [...] chip. Our measurement results from a fully developed 2-D channel flow are well agreeable with previously published results. For the first time, real-time 2-D wall shear-stress images in a turbulent flow have been experimentally obtained.

A new technology for the integration of micro-sensors, micro-actuators and microelectronics (M3) on a single chip has been explored. Prototype M3 chips including shear-stress sensors, magnetic actuators and CMOS circuits have been fabricated. This technology sets a base for the future development of a fully functional M3 chip drag reduction.

Finally, a novel flexible MEMS skin technology fully compatible with IC process has been developed. Mechanically, the skin is made of metal leads sandwiched between polyimide layers that connect a number of silicon islands together. The skin can be applied conformablly on non-planar surfaces. The first application of this technology is a flexible shear-stress sensor skin that has been successfully used for the real-time measurement of shear-stress distribution on the leading edge of a delta wing model.

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