Millimeter-Wave Monolithic Schottky Diode-Grid Phase Shifter

Author: Lam, Wayne W.

Year: 1987

Degree: Dissertation (Ph.D.)

Advisor: Rutledge, David B.

Committee Members: Rutledge, David B.; Psaltis, Demetri; Vahala, Kerry J.; Yariv, Amnon; Luhmann, Neville C., Jr.; Bridges, William B.; Nicolet, Marc-Aurele

Option: Electrical Engineering

DOI: 10.7907/CGD0-XA98

Abstract

Many applications at millimeter wavelengths require fast electronic phase shifters. In this study, the design of diode-grid phase shifters is presented, the fabrication of diode-grids on monolithic gallium-arsenide substrates is demonstrated, and the measurement of these grids is discussed. A new computer-aided design tool is developed to provide an interactive environment for design and to form a basis for comparing theory and experimental results. Diode-grids have been fabricated on 2 cm by 3 cm gallium-arsenide wafers with 2000 aluminum Schottky diodes. A novel small aperture reflectometer is computerized to use a wave-front division interference technique to measure the reflection coefficient of the grids. A 70° phase shift with a 6.5-dB loss was measured at 93 GHz when the bias on the diode-grid was changed from -3V to +1V.

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